Sense amplifiers including bipolar transistor input buffers and

Details Sense amplifiers including bipolar transistor input buffers and Sense amplifiers including bipolar transistor input buffers and

1997-11-06

1999-04-13

Tran, Toan

Miscellaneous active electrical nonlinear devices, circuits, and

Specific signal discriminating without subsequent control

By amplitude

327 57, 327432, G11C 706

Patent

active

058942335

ABSTRACT:
Sense amplifiers for integrated circuit memory devices including a bipolar transistor voltage gain input buffer and a first effect transistor latch circuit. The bipolar transistor voltage gain input buffer is responsive to a pair of complementary input signals from a memory cell, to amplify the voltage differential between the pair of complementary input signals. The field effect transistor latch circuit is responsive to the bipolar transistor voltage gain input buffer, to latch the voltage differential so amplified, and thereby produce a pair of complementary output signals.

REFERENCES:
patent: 4604533 (1986-08-01), Miyamoto et al.
patent: 5247479 (1993-09-01), Young
patent: 5287314 (1994-02-01), Flannagan et al.
patent: 5345120 (1994-09-01), Taylor

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