Sense amplifier with high speed, stabilized read-out

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

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365207, 365208, 365154, G11C 700, G11C 1140

Patent

active

045424845

ABSTRACT:
A memory device which has highly stabilized read-out characteristics and is suitable to a highly integrated structure is disclosed.
The memory device comprises a flip-flop having first and second enhancement type field effect transistors which are cross-connected at first and second junction points, and third and fourth depletion type field effect transistors connected between said flip-flop and a pair of first and second bit lines and having their gates connected to a common third junction point of said flip-flop.

REFERENCES:
patent: 3600609 (1971-08-01), Christensen
patent: 4061999 (1977-12-01), Proebsting et al.
patent: 4413330 (1983-11-01), Chao et al.
patent: 4451906 (1984-05-01), Ikeda
Anderson, "Sense Latch with Adjusting Series Impedance," IBM Technical Disclosure Bulletin, vol. 22, No. 11, Apr. 1980, pp. 4861-4862.

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