Sense amplifier with adaptive reference generation

Details Sense amplifier with adaptive reference generation Sense amplifier with adaptive reference generation

2006-05-30

2006-05-30

Mai, Son (Department: 2827)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S203000, C365S208000, C365S210130

Reexamination Certificate

active

07054212

ABSTRACT:
A digital memory system (30) includes a memory cell (52), a bit line (50), a transfer gate (60) a reference voltage generator (40), a sense amplifier (70) and a control circuit (80). The control circuit precharges the bit line to a bit line precharge voltage, which is sampled and stored. A corresponding reference voltage is generated after the bit line is isolated. The bit line and reference voltage are coupled to the sense amplifier so that a voltage is received based on charge stored in the memory cell. The sense amplifier then is isolated from the bit line and reference voltage and the sense amplifier is energized so that an output voltage is derived from the charge and reference voltage.

REFERENCES:
patent: 5963484 (1999-10-01), Jung
patent: 6411557 (2002-06-01), Terzioglu et al.
patent: 6566913 (2003-05-01), Dai
patent: 6711087 (2004-03-01), Afghahi et al.
patent: 6901019 (2005-05-01), Terzioglu et al.

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