Sense amplifier pulldown device with tailored edge input

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

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Details

365206, 365208, 307530, G11C 700, G11C 702

Patent

active

050420119

ABSTRACT:
A tailored edge rate triggers a pulldown device which turns on a sense amplifier in a memory array to sense and amplify a voltage difference between two digit lines, facilitating a memory cell read operation. The tailored edge rate activates the pulldown device slowly at first, then quickly saturates it, to allow transistors in the sense amplifier to activate and quickly sense the digit lines without bouncing same.

REFERENCES:
patent: 4000413 (1976-12-01), Wong et al.
patent: 4551641 (1985-11-01), Pelley, III
patent: 4791613 (1988-12-01), Hardee

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