Sense amplifier power-gating technique for integrated...

Details Sense amplifier power-gating technique for integrated... Sense amplifier power-gating technique for integrated...

2007-07-24

2007-07-24

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S207000, C365S189050

Reexamination Certificate

active

10776103

ABSTRACT:
A sense amplifier power-gating circuit and method is disclosed which is of particular utility with respect to DRAM devices, or those incorporating embedded DRAM, and having a power-down (or Sleep) mode of operation. In accordance with a particular technique of the present invention, the local sense amplifier driver transistors serve a dual purpose as both driver and power gate transistors thereby obviating the need for large, distinct power-gating devices. This serves to minimize on-chip area requirements while not degrading sensing speed as in conventional approaches.

REFERENCES:
patent: 5541885 (1996-07-01), Takashima
patent: 5814851 (1998-09-01), Suh
patent: 6049245 (2000-04-01), Son et al.
patent: 6072333 (2000-06-01), Tsukagoshi et al.
patent: 6100563 (2000-08-01), Arimoto
patent: 6208575 (2001-03-01), Proebsting
patent: 6275432 (2001-08-01), Hardee
patent: 6307408 (2001-10-01), Shamiou et al.
patent: 6424585 (2002-07-01), Ooishi
patent: 6449182 (2002-09-01), Ooishi
patent: 6449204 (2002-09-01), Arimoto et al.
patent: 6635934 (2003-10-01), Hidaka
patent: 6670939 (2003-12-01), Yang et al.
patent: 6795328 (2004-09-01), Kato et al.
patent: 2000-293986 (2000-10-01), None
patent: 2002-025267 (2002-01-01), None
patent: 2003-347431 (2003-05-01), None
Min, Kyeong-Sik, Kawaguchi, Hiroshi, Sakurai, Takayasu, ZigZag Super Cut-off CMOS (ZSCCMOS) Block Activation with Self-Adaptive Voltage Level Controller: An Alternative to Clock-Gating Scheme In Leakage Dominant Era, 2003 IEEE International Solid-State Circuits Conference, Feb. 12, 2003, Salon 1-6, pp. 400-401 and 501-502.

Affiliated with

Also associated with

Rating

Sense amplifier power-gating technique for integrated... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sense amplifier power-gating technique for integrated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sense amplifier power-gating technique for integrated... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3809950