Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1998-02-20
1999-04-27
Mai, Son
Static information storage and retrieval
Read/write circuit
Differential sensing
36518907, 365207, 365210, G11C 700
Patent
active
058986324
ABSTRACT:
A sense amplifier of a virtual ground flat cell is provided that prevents leakage currents. The sense amplifier includes a first through third current/voltage converters and a voltage comparator. The third current/voltage converter maintains electric potentials substantially equal between cells adjacent and nearby a selected cell being read. In particular, the third current/voltage converter maintains electric potentials between the low cells coupled to a ground terminal not selected as a bit line. The first current/voltage converter converts a current from the selected memory cell received via a bit line to a first voltage. The second current/voltage converter converts a reference current to a reference voltage. The voltage comparator compares the first and reference voltages to output a voltage corresponding to the data stored in the selected memory cell. The third current/voltage converter uses the first voltage to convert the current sensed in the bit line into a voltage to cut off the leakage current flowing to a non-selected virtual ground side through a low cell adjacent to a high cell being read.
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patent: 5148063 (1992-09-01), Hotta
patent: 5301149 (1994-04-01), Jinbo
patent: 5369614 (1994-11-01), Miyanishi
patent: 5396467 (1995-03-01), Liu et al.
patent: 5530671 (1996-06-01), Hashimoto
patent: 5781489 (1998-07-01), Okamoto
LG Semicon Co. Ltd.
Mai Son
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