Sense amplifier of ferroelectric memory device

Details Sense amplifier of ferroelectric memory device Sense amplifier of ferroelectric memory device

2007-02-06

2007-02-06

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S145000

Reexamination Certificate

active

11057191

ABSTRACT:
A SENSE AMPLIFIER OF FERROELECTRIC MEMORY DEVICE features improvement of the amplification degree. The SENSE AMPLIFIER OF FERROELECTRIC MEMORY DEVICE comprises a MBL sensing unit, a voltage dropping unit, a coupling regulation unit, a pull-down regulation unit, a sensing load unit, and an amplification unit. The level of the sensed voltage is double regulated, thereby improving the amplification degree on low voltage sensing data, and a small sensing voltage of a main bit line can be embodied, thereby embodying a lower voltage memory.

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patent: 6363439 (2002-03-01), Battles et al.
patent: 6888770 (2005-05-01), Ikehashi
patent: 19990080861 (1999-11-01), None

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