Sense amplifier including MOS transistors having threshold volta

Details Sense amplifier including MOS transistors having threshold volta Sense amplifier including MOS transistors having threshold volta

1996-01-11

1997-07-08

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365207, 365208, 36518909, 365190, 365227, 365203, 365193, 365194, G11C 11419

Patent

active

056469004

ABSTRACT:
N channel sense amplifier transistors have their backgate potentials set to a backgate precharge potential higher than a potential intermediate between an operation power supply potential and a ground potential prior to start of sensing operation, and then lowered following the lowering of an n common source node potential during the sensing operation. The n common source node is precharged to the intermediate potential. The backgate precharge potential is set no greater than a potential of the intermediate potential plus a pn junction diffusion, to suppress a leakage current from the backgate to source or drain of each of the sense amplifier transistors. P channel sense amplifier transistors have also their backgate potential set to a precharge potential lower than the intermediate potential prior to sensing operation and raised following the rise of a p common source node potential.

REFERENCES:
patent: 5177586 (1993-01-01), Ishimura et al.
patent: 5337270 (1994-08-01), Kawata et al.

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