Sense amplifier having increased drive current capability

Static information storage and retrieval – Read/write circuit – Differential sensing

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36518911, G11C 702

Patent

active

061153095

ABSTRACT:
A semiconductor memory device sensing circuit (400) is disclosed. The circuit includes a number of sense amplifiers (402), each of which is coupled to a first supply node (414) by a first driver device (P404-0 to P404-n), and to a second supply node (420) by a second driver device (N404-0 to N404-n). An increased driving current capability is provided by a number of first boost capacitors (C400) coupled between the first supply node (414) and an intermediate voltage (Vplate), and a number of second boost capacitors (C402) coupled between the second supply node (420) and the intermediate voltage (Vplate).

REFERENCES:
patent: 5801997 (1998-09-01), Hsieh et al.

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