Sense amplifier for semiconductor memory device

Details Sense amplifier for semiconductor memory device Sense amplifier for semiconductor memory device

2011-06-28

2011-06-28

Sofocleous, Alexander (Department: 2824)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S189140, C365S205000, C365S207000, C365S230030

Reexamination Certificate

active

07969765

ABSTRACT:
A direct sense amplifier of the present invention incorporates and isolates: an MOS transistor serving as a differential pair and having a gate connected to a bit line; and an MOS transistor controlled by a column select line wired between RLIO lines in a bit-line direction, and further connects a source of the MOS transistor serving as the differential pair to a common source line wired in the word-line direction. Since the direct sense amplifier only in a select map is activated by the column select line and the common source line during an read operation, power consumption is significantly reduced during the read operation. Also, since a parasitic capacitance of the MOS transistor serving as the differential pair is separated from the local IO line, a load capacity of the local IO line is reduced and the read operation is speeded up. In addition, during the read operation, a data pattern dependency of the load capacity of the local IO line is reduced and a post-manufacture test is easily made.

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Office Action from the Japanese Patent Office, dated May 26, 2009 (with English translation).

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