Sense amplifier for semiconductor memory device

Details Sense amplifier for semiconductor memory device Sense amplifier for semiconductor memory device

1991-09-30

1993-11-09

Bowler, Alyssa H.

Static information storage and retrieval

Read/write circuit

365190, 365207, 365208, G11C 700, G11C 11407

Patent

active

052608999

ABSTRACT:
A semiconductor memory device for reading data from a selected memory cell. The memory cells are arranged in an array. First bit lines and word lines, coupled to the memory cells, are arranged in a matrix. The word lines select the selected cell. An amplification circuit amplifies the current passing through the selected memory cell and is coupled to the first bit. A second bit line is coupled to the amplification circuit and carries the amplified current. A sensing circuit coupled to the second bit line senses the current on the second bit line. As a result, the current passing through the selected memory cell is detected.

REFERENCES:
patent: 4670675 (1987-06-01), Donoghue
patent: 4725984 (1988-02-01), Ip et al.
patent: 4815040 (1989-03-01), Matsuz et al.
"An 80ns 1MB ROM" by Fujio Masuoka, et al., 1984 IEEE International Solid-State Circuits Conference, pp. 146, 147 and 329.
"4M Bit Mask ROM And The Application Therefore" by Shoichi Tsujita Electronic Parts and Materials, published Jan. 1, 1986, pp. 104-108.

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