Sense amplifier for reading logic devices

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

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365156, 36518929, 36518911, G11C 706

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active

056572905

ABSTRACT:
A sense amplifier is provided which is appropriate for reading memory cells which control N-channel transistors, and which can read single ended registers. The sense amplifier pulls bit and bitbar lines to a high voltage before reading, and interprets equal voltages on two legs as a logical 1. Several embodiments are illustrated, one of which latches the value read from a memory cell, and one of which includes two stages.

REFERENCES:
West, N. and Eshraghian, K. "Principles of CMOS VLSI Design--A Systems Perspective", Addison-Wesley, 1985, pp. 362-364.
Glasser, L.A., Dobberpuhl, D.W., "The Design and Analysis of VLSI Circuits", Addison-Wesley, 1985, pp. 283-291.
Prince, B., "Semiconductor Memories--A Handbook of Design, Manufacture, and Application", Wiley, 1991, pp. 164-165, pp. 172-174, pp. 255-259, pp. 281-285, and pp. 418-420.
Textbook, "Analogue IC Design: The Current Mode Approach", Peter Peregrinus Ltd. (London), ISBN 086341 2157, Chapter 12, pp. 451-489, Toumazou et al. Editors.

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