Sense amplifier for a ROM having a multilevel memory cell

Details Sense amplifier for a ROM having a multilevel memory cell Sense amplifier for a ROM having a multilevel memory cell

1988-07-15

1991-04-30

Gossage, Glenn

Static information storage and retrieval

Read/write circuit

Differential sensing

365169, 365104, 365210, 365184, 307530, G11C 1718

Patent

active

050124480

ABSTRACT:
A multilevel sense circuit includes a memory MOSFET having one of at least two different current carrying states and a pair of reference MOSFETs one of which has one of the two current carrying states and the other of which has the other current carrying state. A first current supplying circuit is connected to the memory MOSFET for supplying a predetermined amount of current thereto when the memory MOSFET is activated. A second current supplying circuit is connected to the pair of reference MOSFETs and also to the first current supplying circuit, such that twice the aforementioned predetermined amount of current is supplied to the pair of reference MOSFETs when the memory MOSFET is activated. A multilevel semiconductor memory device includes a MOSFET having a channel whose width is varyingly set by providing a non-inverting region in a selected area of the channel by ion implantation.

REFERENCES:
patent: 4287570 (1981-09-01), Stark
patent: 4376987 (1983-03-01), Hsia
patent: 4388702 (1983-06-01), Sheppard
patent: 4488065 (1984-12-01), Doty, II
patent: 4604732 (1986-08-01), van Tran
patent: 4751682 (1988-06-01), Matsuoka et al.
Donoghue et al., "A 256K HCMOS ROM Using A Four-State Cell Approach", IEEE Jour. of Sol. St. Cets., vol. SC-20, No. 2, Apr. 1985, pp. 598-602.

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