Sense amplifier enable signal generator for semiconductor memory

Details Sense amplifier enable signal generator for semiconductor memory Sense amplifier enable signal generator for semiconductor memory

1997-11-07

1999-03-09

Hoang, Huan

Static information storage and retrieval

Read/write circuit

Differential sensing

365205, 36518907, 365233, G11C 702

Patent

active

058810072

ABSTRACT:
A sense amplifier enable signal generator for a semiconductor memory device, comprising a counter for generating a pulse signal synchronously with a clock signal when a row address strobe bar signal is made active and suppressing the generation of the pulse signal when the row address strobe bar signal is disabled, and a comparator for generating a sense amplifier enable signal when an output value from the counter reaches a predetermined time delay value and suppressing the generation of the sense amplifier enable signal when the row address strobe bar signal is disabled. According to the present invention, a sense amplifier can be operated at a proper time without being affected by a process parameter, an operating voltage, temperature, etc.

REFERENCES:
patent: 4879685 (1989-11-01), Takemae
patent: 4906870 (1990-03-01), Gongwer
patent: 5343438 (1994-08-01), Choi et al.
patent: 5708624 (1998-01-01), Leung

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