Sense amplifier driver for memory device having reduced power di

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307263, 307592, 307601, 365205, 365233, G11C 700

Patent

active

051401991

ABSTRACT:
An improved sense amplifier driver for sensing and restoring data in memory cells is disclosed. Pull-up means in the form of p-channel MOS transistors are respectively provided for forcibly pulling up the gate voltage of delayable p-channel MOS transistors within the first inverter of the sensing clock driver and the second inverter of the restore clock driver in the trailing transient periods of the sensing and restoring clock signals. The formation of a DC current path between the power line and the ground line in any one of the delayable p-channel MOS transistors is prevented, thereby making it possible to avoid the unnecessary power dissipation. Further, delaying resistances are installed respectively in the first inverter of the sensing clock driver and in the second inverter of the restoring clock driver to make the slope of the leading edges of the sensing and restoring clocks less steep, thereby making it possible to exclude the occurrence of noise.

REFERENCES:
patent: 3943496 (1976-03-01), Padgett et al.
patent: 4295062 (1981-10-01), Mihalich et al.
patent: 4508978 (1985-04-01), Reddy
patent: 4638187 (1987-01-01), Boler et al.
patent: 4649295 (1987-03-01), McLaughlin et al.
patent: 4707626 (1987-11-01), Inoue
patent: 4749882 (1988-06-01), Morgan
patent: 4771195 (1988-09-01), Stein
patent: 4829199 (1989-05-01), Prater
patent: 4855623 (1989-08-01), Flaherty
IBM Tech. Disc. Bult.; Chakravarti et al.; High Gain Sense Amplifier; Dec. 1977; p. 206.
Wong et al.; Memory Techniques-A 45ns Fully Static 16K MOS ROM; Feb. 19, 1981; p. 150.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Sense amplifier driver for memory device having reduced power di does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sense amplifier driver for memory device having reduced power di, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sense amplifier driver for memory device having reduced power di will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1250921

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.