Sense amplifier configuration for a semiconductor memory device

Details Sense amplifier configuration for a semiconductor memory device Sense amplifier configuration for a semiconductor memory device

2005-01-25

2005-01-25

Le, Thong Q. (Department: 2818)

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

C365S226000

Reexamination Certificate

active

06847568

ABSTRACT:
A memory sense amplifier for a semiconductor memory device is provided with a compensation current source device that generates a compensation current and feeds it to an interconnected bit line. The compensation current is selected in such a manner that during readout a potential gradient can be generated and/or maintained in cooperation with a compensation voltage source device on the selected and interlinked bit line device that is substantially constant over time.

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patent: 199 14 488 (2000-05-01), None
patent: 1 104 092 (2001-05-01), None
Anonymous: “Verstärker zur Verstärkung kleiner Ströme” [amplifier for amplifying low voltages],Research Disclosure, Jun. 1992, No. 338, pp. 519-522, XP-000315729.

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