Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1997-11-14
1999-10-19
Nguyen, Viet Q.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365149, 365205, 365202, G11C 1122
Patent
active
059699809
ABSTRACT:
A sense amplifier cell layout for use in a 1T/1C ferroelectric memory array includes a first sense amplifier having two input/output nodes for receiving a first bit line signal and a first inverted bit line signal and a second sense amplifier having two input/output nodes for receiving a second bit line signal and a second inverted bit line signal, wherein the combined width of the first and second sense amplifiers is substantially the same as the width of two columns of 1T/1C memory cells used in the array.
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Allen Judith E.
Lehman Lark E.
Wilson Dennis R.
Burton, Esq. Carol W.
Meza, Esq. Peter J.
Nguyen Viet Q.
Ramtron International Corporation
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