Sense amplifier circuit for dynamic read/write memory

Details Sense amplifier circuit for dynamic read/write memory Sense amplifier circuit for dynamic read/write memory

1984-08-14

1985-11-26

Moffitt, James W.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365210, G11C 700, G11C 1124

Patent

active

045557772

ABSTRACT:
A semiconductor dynamic read/write memory device using one-transistor storage cells and balanced bit lines employs a differential sense amplifier having dual sets of transistors for both the N-channel and P-channel transistor pairs in a CMOS flip-flop circuit. One set of P and N channel transistors is cross-coupled in the conventional manner, and the other set is cross-coupled by way of series transistors which are shut off for write operations, bypassing static loads for write.

REFERENCES:
patent: 4239993 (1980-12-01), McAlexander, III
patent: 4386419 (1983-05-01), Yamamoto
IBM Technical Disclosure Bulletin--vol. 25, No. 10, Mar. 1983, pp. 5088-5091.

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