Sense amplifier circuit

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

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365203, 365204, G11C 700

Patent

active

052474836

ABSTRACT:
A sense amplifier circuit for sensing a datum read from a mask ROM intended for shortening delays in read time due to the stray capacity of the bit line (B1) is disclosed. The circuit has a charging circuit (2, 3) and a discharging-current path (4, 5, 6). At the beginning of a read cycle, the charging circuit is connected to the bit line to promptly precharge the stray capacity. Subsequently an addressing signal is applied to a word line. If the addressed memory cell is an OFF bit, then the electric potential level of the bit line remains unchanged. If the memory cell is an ON bit, then the discharging-current path turns on, thereby enabling prompt discharge.

REFERENCES:
patent: 4439697 (1984-03-01), Suzuki et al.
patent: 4447893 (1984-05-01), Murakami
patent: 4811301 (1989-03-01), Houston

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