Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-01-09
2007-01-09
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S205000
Reexamination Certificate
active
10988787
ABSTRACT:
A current sense amplifier including clamping devices and a current mirror is configured to sense the resistance of an MTJ memory cell utilizing a bitline boost circuit to shorten the charging time for parasitic circuit capacitance. The bitline boost circuit includes a source follower coupled to a reference voltage and a switch coupled to another voltage source. The switch is enabled to conduct during an initial period of sensing the resistance of the memory cell. The source follower in the bitline boost circuit is configured to clamp the voltage of an input signal at substantially the same level as the clamping devices, and to provide additional current to shorten the period for charging parasitic capacitance. The resulting current sense amplifier can be used to implement a memory device with fast and reliable read times and low manufacturing cost.
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Gogl Dietmar
Viehmann Hans-Heinrich
Phung Anh
Slater & Matsil L.L.P.
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