Semicrystalline silicon products

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423348, 428446, C01B 3300

Patent

active

043305822

ABSTRACT:
A method of producing semicrystalline silicon by heating the silicon to a molten state and gradually cooling the silicon to mitigate disruptions in the silicon continuum and promote semicrystalline growth. The product formed is a silicon body, which may be sliced into wafers having highly ordered grains of a mean diameter of at least about one mm.

REFERENCES:
patent: 3624467 (1971-11-01), Bean et al.
patent: 3953876 (1976-04-01), Sirtt et al.
patent: 3995309 (1976-11-01), Torreau, Jr.
patent: 4077818 (1978-03-01), Chu
patent: 4124410 (1978-11-01), Kotral et al.
patent: 4194212 (1980-03-01), Lindmayer
patent: 4249457 (1981-02-01), Lovelace et al.
Lindmayer, New Developments in Silicon Solar Cells, Proceedings Int'l. Photovoltaic Solar Energy Conference, 1978.

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