Semiconductor with through-substrate interconnect

Details Semiconductor with through-substrate interconnect Semiconductor with through-substrate interconnect

2011-06-28

2011-06-28

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S197000, C257S621000, C257SE23011, C257SE23174, C257SE21577, C257SE21597, C257SE21627

Reexamination Certificate

active

07968460

ABSTRACT:
Semiconductor devices are described that have a metal interconnect extending vertically through a portion of the device to the back side of a semiconductor substrate. A top region of the metal interconnect is located vertically below a horizontal plane containing a metal routing layer. Method of fabricating the semiconductor device can include etching a via into a semiconductor substrate, filling the via with a metal material, forming a metal routing layer subsequent to filling the via, and removing a portion of a bottom of the semiconductor substrate to expose a bottom region of the metal filled via.

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