Semiconductor with implanted dielectric layer having patched pin

Details Semiconductor with implanted dielectric layer having patched pin Semiconductor with implanted dielectric layer having patched pin

1994-12-15

1997-03-04

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257348, 257349, 257350, 257351, 257352, 257353, 257354, 257401, 257507, 257638, 257639, 257649, H01L 2701

Patent

active

056082525

ABSTRACT:
Pin-holes or thin sections in the implanted dielectric layer of a SIMOX device are patched by forming a reverse biasable PN junction within the depth range of or proximate to the dielectric layer. A charge depletion zone forms about the PN junction when the Latter is reverse-biased and reinforces or patches weak spots in the implanted dielectric layer such as pin-holes and thin-sections.

REFERENCES:
patent: 4686758 (1987-08-01), Liu et al.
patent: 4837172 (1989-06-01), Mizuno et al.
patent: 4975126 (1990-12-01), Margail et al.
patent: 5047356 (1991-09-01), Li et al.
patent: 5080730 (1992-01-01), Wittkower
patent: 5143858 (1992-09-01), Tomozane et al.
patent: 5196355 (1993-03-01), Wittkower

Affiliated with

Also associated with

Rating

Semiconductor with implanted dielectric layer having patched pin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor with implanted dielectric layer having patched pin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor with implanted dielectric layer having patched pin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2148072