Semiconductor with bottom-side wrap-around flange contact

Details Semiconductor with bottom-side wrap-around flange contact Semiconductor with bottom-side wrap-around flange contact

2008-06-26

2010-12-28

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S110000, C438S112000, C438S458000, C438S459000, C438S460000, C257S741000, C257S735000, C257S774000

Reexamination Certificate

active

07858512

ABSTRACT:
A packaging technique for electronic devices includes wafer fabrication of flexible contacts on the bottom surface of the substrate underneath the active circuit. Inherently reliable contacts suitable for a variety of devices can be formed via a simple fabrication process with good wafer packing density. For one embodiment, a trench is formed from the back of the substrate, exposing an upper conductive layer on the top surface. A standoff is formed on the bottom surface of the substrate. A lower conductive layer is formed that runs from and electrically connects with the exposed portion of the upper conductive layer onto the substrate standoff. The standoff is removed, releasing the formed conductors, resulting in a flexible contact.

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