Semiconductor with active component and method for manufacture

Details Semiconductor with active component and method for manufacture Semiconductor with active component and method for manufacture

2011-01-25

2011-01-25

Wilson, Allan R (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

C257S330000, C257SE29052, C257SE29118

Reexamination Certificate

active

07875951

ABSTRACT:
A semiconductor with active component and method for manufacture. One embodiment provides a semiconductor component arrangement having an active semiconductor component and a semiconductor body having a first semiconductor zone, a third semiconductor zone, and also a drift zone arranged between the first semiconductor zone and the third semiconductor zone. A patterned fourth semiconductor zone doped complementarily to the drift zone is arranged in the drift zone. A potential control structure is provided, which is connected to the patterned fourth semiconductor zone. The potential control structure is designed to connect the patterned fourth semiconductor zone, in the off state of the semiconductor component, to an electrical potential lying between the electrical potential of the first semiconductor zone and the electrical potential of the third semiconductor zone.

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