Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2008-01-29
2011-10-25
Kunemund, Bob M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S015000, C117S018000, C117S020000, C117S932000
Reexamination Certificate
active
08043427
ABSTRACT:
Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.
REFERENCES:
patent: 5954873 (1999-09-01), Hourai et al.
patent: 6458202 (2002-10-01), Kojima et al.
patent: 6858076 (2005-02-01), Nakajima et al.
patent: 6869478 (2005-03-01), Nakamura et al.
patent: 6902618 (2005-06-01), Iida
patent: 7141113 (2006-11-01), Nakamura et al.
patent: 7442251 (2008-10-01), Inami et al.
patent: 2004/0112277 (2004-06-01), Kulkarni
patent: 2006/0283379 (2006-12-01), Inami et al.
patent: 2006/0292890 (2006-12-01), Ammon et al.
patent: 103 39 792 (2004-10-01), None
patent: 1158076 (2001-11-01), None
patent: 2000072590 (2000-03-01), None
patent: 2000044 388 (2005-03-01), None
patent: 2006137174 (2006-12-01), None
K. Tanahashi, N. Inoue, Journal of Material Science: Materials in Electronics 10 (1999), pp. 359-363.
Nakai et al., Jap. Journal of Applied Physics, vol. 43, No. 4A, 2004, pp. 1247-1253.
Haeckl Walter
Sattler Andreas
Schmidt Herbert
von Ammon Wilfried
Weber Martin
Brooks & Kushman P.C.
Kunemund Bob M
Siltronic AG
LandOfFree
Semiconductor wafers of silicon and method for their production does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor wafers of silicon and method for their production, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor wafers of silicon and method for their production will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4292464