Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2008-05-13
2008-05-13
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257SE21524, C438S011000, C438S018000, C438S462000
Reexamination Certificate
active
11304074
ABSTRACT:
The invention relates to a semiconductor wafer (1) having a plurality of first sawing regions (201-211) running parallel to one another in a first direction (X) and a plurality of second sawing regions (301-311) running parallel to one another in a second direction (Y), having useful regions (10) which in each case contain an integrated circuit (100) and which are in each case arranged between respective adjacent first sawing regions (201-211) and respective adjacent second sawing regions (301-311), and at least one test structure region arranged in the first sawing regions (201-211) and the second sawing regions (301-311) with test structures formed therein for checking electrical parameters of semiconductor elements. Connection contacts (51-54) connected to the test structures are provided in the test structure region, which connection contacts form a first row (R1) and a second row (R2), which in each case run in a longitudinal direction (L) and are offset relative to one another in the longitudinal direction (L) and transversely with respect to the longitudinal direction (L).
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Lachenmann Susanne
Rosskopf Valentin
Sukman-Praehofer Sibina
Winter Ramona
Fourson George
Infineon - Technologies AG
Slater & Matsil L.L.P.
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