Semiconductor wafer with low-K dielectric layer and process...

Details Semiconductor wafer with low-K dielectric layer and process... Semiconductor wafer with low-K dielectric layer and process...

2011-08-09

2011-08-09

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S637000, C438S780000, C438S790000, C438S795000, C257S040000, C257SE21581

Reexamination Certificate

active

07994069

ABSTRACT:
To improve the mechanical strength of a wafer comprising a low-k dielectric layer, the low-k dielectric layer is formed so as to have certain regions of low dielectric constant and the remainder having a higher mechanical strength. The higher-strength regions may have a relatively-higher value of dielectric constant. Selective ultraviolet curing of a dielectric material can be performed so as to expel a porogen from the region(s) desired to have low dielectric constant. A photomask, hardmask, or opaque resist, patterned so as to define the region(s) to have lower dielectric constant, is used to shield the remainder of the dielectric material from the ultraviolet radiation. Alternatively, a layer of dielectric material can be blanket cured to lower its dielectric constant, then non-critical regions thereof can be selectively over-cured whereby to produce regions of increased mechanical strength.

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