Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1990-12-10
1993-03-30
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257747, 257774, 257779, 257757, 257766, H01L 2348, H01L 2944, H01L 2954, H01L 2960
Patent
active
051986957
ABSTRACT:
A bonded structure is described consisting of a semiconductor wafer, preferably gallium arsenide, soldered to a substrate material. A method for forming the structure is also described. The structure provides mechanical support and thermal conductivity for the wafer, as well as a multitude of connections through the substrate material at predetermined locations on the wafer. The substrate material and the soldering process are selected to minimize the resulting stresses in the wafer. A pattern of pads consisting of a refractory metal covered by a solder material is formed on the substrate to maintain space for excess solder in order to avoid the shorting of the individual connections on the wafer, and to control the size and location of voids in the solder upon solidification.
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Clarke Rowland C.
Driver Michael C.
Hanes Maurice H.
James Andrew J.
Jr. Carl Whitehead
Maire David G.
Westinghouse Electric Corp.
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