Semiconductor wafer treating device utilizing a plasma

Details Semiconductor wafer treating device utilizing a plasma Semiconductor wafer treating device utilizing a plasma

1988-11-29

1991-01-01

LaRoche, Eugene R.

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

31511121, 2504922, 20429831, 20429837, 20429838, H05H 146

Patent

active

049821385

ABSTRACT:
A wafer treating device utilizing a plasma generated by a gas discharge caused by electron cyclotron resonance (ECR) includes a wafer treating chamber and a plasma generating chamber, a microwave supply for supplying microwave energy to the plasma generating chamber, and an electromagnetic coil which surrounds the plasma generating chamber to produce a minimum B-field therein. A plasma generated in the plasma generating chamber by electron cyclotron resonance is confined stably therein by the minimum B-field produced by the coil. Thus, the density and stability of the plasma in the plasma generating chamber are enhanced. The plasma in the plasma generating chamber is conveyed to a wafer in the wafer treating chamber along the diverging lines of a magnetic force. Examples of the minimum B-field producing coil include Ioffe bars, a baseball coil and an Yin-yang coil.

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Matsuoka et al, "Low-energy ion extraction with small dispersion from an electron cyclotron resonance microwave plasma stream", appl. Phys. Lett. 50 (26), Jun. 29, 1987.
De Dionigi et al, "Large Diameter rf Plasma for Pre-Ionization in Confinement Device", Applied Physics Letters, vol. 19, No. 1, Jul. 1971.

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