Semiconductor wafer processor, plasma generating apparatus, magn

Details Semiconductor wafer processor, plasma generating apparatus, magn Semiconductor wafer processor, plasma generating apparatus, magn

1998-03-24

2000-12-26

Mills, Gregory

Coating apparatus

Gas or vapor deposition

With treating means

118728, C23C 16458

Patent

active

061642401

ABSTRACT:
A semiconductor wafer processor includes a chamber having a wafer support. A magnetic field generator is configured to generate a magnetic field within the chamber at a location proximate a surface of a wafer received by the wafer support. The magnetic field generator comprises a plurality of conductors within the chamber proximate the support which radiate outwardly from a substantially common origin to a periphery. The origin and periphery can be in the same or multiple planes. In one embodiment, the magnetic field generator includes a first plurality of conductors radiating outwardly from a first origin to a first periphery, and a second plurality of conductors annularly radiating outwardly from an annular second origin to an annular second periphery. The first periphery is received at least partially within the second annular periphery. The generator can be utilized apart from a semiconductor wafer processor, such as for example in an electric motor or plasma generating apparatus.

REFERENCES:
patent: 4996077 (1991-02-01), Moslehi et al.
patent: 5041760 (1991-08-01), Koloc
patent: 5105761 (1992-04-01), Charlet et al.
patent: 5505780 (1996-04-01), Dalvie et al.
Purcell, Edward M., "Electricity And Magnetism", Berkeley Physics Course, Second Edit., Education Development Center, McGraw-Hill Book Company, vol. 2, pp. 247-248; 281-282; 285-286 (1965).
Lieberman, Michael A., et al., Principles Of Plasma Discharges And Materials Processing, "Plasma Dynamics", Wiley-Interscience Publication, John Wiley & Sons, Inc., Chapter 4, pp. 85-128; 146-153; 373-378; 388-396; 465-471 (1994).
McGraw-Hill Dictionary of Scientific and Technical Terms.COPYRGT. 1994, definitions taken from pp. 919 and 2044, 2 pages.
Hosoya et al, Rev. Sci. Instrum. 62 (10), Oct. 1991.
Kaminishi et al, Rev. Sci. Instrum. 52 (3), Mar. 1981.
L.B. Luganskii, Soviet Physics, 31 (5), May 1986.
Petrov et al, JVAC A, 10 (5), Sep. 1992.

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