Semiconductor wafer made from silicon and method for...

Details Semiconductor wafer made from silicon and method for... Semiconductor wafer made from silicon and method for...

2005-01-18

2005-01-18

Flynn, Nathan J. (Department: 2826)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S013000, C117S034000

Reexamination Certificate

active

06843848

ABSTRACT:
A semiconductor wafer made from silicon which is doped with hydrogen. The hydrogen concentration is less than 5*1016atcm−3and greater than 1*1012atcm−3. A method for producing a semiconductor wafer from silicon includes separating the semiconductor wafer from a silicon single crystal, with the single silicon crystal being pulled from a melt, in the presence of hydrogen, using the Czochralski method. The hydrogen partial pressure during the pulling of the single silicon crystal is less than 3 mbar.

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