Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2005-04-19
2005-04-19
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S455000, C438S456000, C438S977000
Reexamination Certificate
active
06881648
ABSTRACT:
A semiconductor wafer (70) that includes a support body (72), at least one thin die (20, 60), and a plurality of tethers (78, 178). The support body (72) is made of a semiconductor material. The thin die (20, 60) has a circuit (21) formed thereon and has an outer perimeter (74) defined by an open trench (76). The open trench (76) separates the thin die (20, 60) from the support body (72). The tethers (78, 178) extend across the open trench (76) and between the support body (72) and the thin die (20, 60). A method of making a thin die (20, 60) on a wafer (70) where the wafer (70) has a support body (72), a topside (82) and a backside (90). A circuit (21) is formed on the topside (82) of the wafer (70). The method may include the steps of: forming a cavity (88) on the backside (90) of the wafer (70) beneath the circuit (21) that defines a first layer (92) that includes the circuit (21); forming a trench (76) around the circuit (21) on the topside (82) of the wafer (70) that defines an outer perimeter (74) of the thin die (20, 60); forming a plurality of tethers (78, 178) that extend across the trench (76) and between the wafer support body (72) and the thin die (20, 60); and removing a portion of the first layer (92) to define the bottom surface (75) of the thin die (20, 60).
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Chen Shiuh-Hui Steven
Garza Raymond
Ross Carl
Turalski Stefan
Jr. Carl Whitehead
Mancini Brian M.
Miller Thomas V.
Mitchell James
Motorola Inc.
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