Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Patent
1999-05-13
2000-10-24
Dutton, Brian
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
438427, 438622, 438692, 438975, H01L 2176, H01L 214763, H01L 21302
Patent
active
061366625
ABSTRACT:
A method of creating a layer-to-layer alignment mark in a semiconductor wafer includes the step of depositing a first conductor layer on a substrate associated with the semiconductor wafer. The method also includes the step of fabricating a number of alignment trenches in the first conductor layer. Moreover, the method includes the step of depositing a first insulator layer on the first conductor layer so as to fill the number of alignment trenches. Yet further, the method includes the step of removing material associated with the first insulator layer from the number of alignment trenches such that an upper surface of the first conductor layer and an upper surface of the first insulator layer define a first alignment step feature which possesses a predetermined height. The method also includes the step of depositing a second conductor layer on the semiconductor wafer subsequent to the removing step. A semiconductor wafer is also disclosed.
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Allman Derryl D. J.
Hainds Curtis C.
Jurgensen Charles W.
Lee Brian R.
Dutton Brian
Kebede Brook
LSI Logic Corporation
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