Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2007-10-30
2007-10-30
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S455000, C438S460000, C438S464000, C257S021000
Reexamination Certificate
active
11117122
ABSTRACT:
There is provided a method for making a wafer comprising the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.
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Abrams Allan D.
Brouillette Donald W.
Danaher Joseph D.
Krywanczyk Timothy C.
Lamothe Rene A.
Driggs, Hogg & Fry Co. LPA
Hogg William N
International Business Machines Corpoartion
Lebentritt Michael
Roman Angel
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