Semiconductor wafer front side protection

Details Semiconductor wafer front side protection Semiconductor wafer front side protection

2006-02-21

2006-02-21

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S691000, C438S692000

Reexamination Certificate

active

07001827

ABSTRACT:
There is provided a method for making a wafer including the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.

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