Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
2006-11-14
2006-11-14
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
C438S113000, C438S462000, C438S463000
Reexamination Certificate
active
07135384
ABSTRACT:
A semiconductor element is formed in a semiconductor wafer, and a groove is formed by performing half-cut dicing on the semiconductor wafer along a dicing line. A dicing region of the semiconductor wafer is irradiated with a laser beam to melt or vaporize a cutting streak formed by dicing. An adhesive tape is adhered to the semiconductor element formation surface of the semiconductor wafer, and the other side of the semiconductor element formation surface is ground to at least a depth reaching the groove.
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Iljima, T. et al., “Semiconductor Device Obtained by Dividing Semiconductor Wafer by Use of Lase Dicing Technique and Method of Manufacturing the Same”, U.S. Appl. No. 10/418,274, filed Apr. 18, 2003.
Official Action from the State Intellectual Property Office of the People's Republic of China dated Sep. 16, 2005, and English language translation of same.
Sato Ninao
Takyu Shinya
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Picardat Kevin M.
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