Semiconductor wafer cleaning and rinsing techniques using re-ion

Details Semiconductor wafer cleaning and rinsing techniques using re-ion Semiconductor wafer cleaning and rinsing techniques using re-ion

1993-03-18

1994-08-09

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437229, H01L 2100, H01L 2102, B44C 122, C03C 1500

Patent

active

053363710

ABSTRACT:
In a wafer fabrication process in which a photoresist stripper must be removed from the surface of a semiconductor wafer, the photoresist stripper is rinsed by inserting the wafer in a vessel (23, FIG. 3) filled with water and simultaneously pumping carbon dioxide and water into the vessel to cause the water to overflow the vessel. Preferably, the wafer is contained within the vessel for at least five minutes, and, during the rinsing step, the water completely fills the vessel and overflows at a rate of at least fifty percent of the volume of the vessel each minute. We have found that this method of rinsing photoresist stripper from semiconductor wafers significantly reduces or eliminates the incidence of corrosion pitting on aluminum conductors (12, FIG. 1) of the wafer (11).

REFERENCES:
patent: 5175124 (1992-12-01), Winebarger

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