Semiconductor wafer, and semiconductor device formed therefrom

Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant

Reexamination Certificate

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Details

C438S033000, C438S068000

Reexamination Certificate

active

07915746

ABSTRACT:
A semiconductor wafer has a substrate, and a plurality of active areas formed on the substrate. Integrated circuits are formed in the active areas. The semiconductor wafer also has dicing areas formed between the adjacent active areas. A seal ring is formed along the edge (periphery) of each active area. The semiconductor wafer also has interconnects formed closely to the inside of the seal ring. A protective layer covers the active areas. A protective film is formed on the protective layer at the locations of the active areas. The semiconductor wafer also has another interconnects formed on the protective film for electrical connection to the integrated circuits. Preferably, when the aspect ratio of a groove formed in the protective layer between the seal ring and the interconnect is 0.5 or more, this groove is covered with the protective film.

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patent: 6929974 (2005-08-01), Ding et al.
patent: 6936930 (2005-08-01), Wang
patent: 7157799 (2007-01-01), Noquil et al.
patent: 7176572 (2007-02-01), Hanaoka
patent: 7382060 (2008-06-01), Farnworth et al.
patent: 7407825 (2008-08-01), Rommeveaux
patent: 2004/0207014 (2004-10-01), Kishiro
patent: 2004/0259306 (2004-12-01), Sakai et al.
patent: 2004/0259325 (2004-12-01), Gan
patent: 2005/0054133 (2005-03-01), Felton et al.
patent: 2006/0088981 (2006-04-01), Chen et al.
patent: 11-191541 (1999-07-01), None

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