Semiconductor wafer and manufacturing method thereof

Details Semiconductor wafer and manufacturing method thereof Semiconductor wafer and manufacturing method thereof

2007-04-11

2009-10-13

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C257S521000, C257S627000, C257SE21320, C438S311000, C438S975000

Reexamination Certificate

active

07601617

ABSTRACT:
The present invention provides a semiconductor wafer comprising an insulated board of sapphire or the like having translucency, which is provided with a positioning orientation flat at a peripheral portion thereof, and a silicon thin film formed over the entire one surface of the insulated board. In the semiconductor wafer, ions are implanted in an area containing the orientation flat at a peripheral portion of the silicon thin film to amorphize silicon. Thus, the translucency at the amorphized spot is eliminated and accurate positioning using the conventional optical sensor can be performed.

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