Semiconductor voltage sensing device

Details Semiconductor voltage sensing device Semiconductor voltage sensing device

1994-10-19

1996-11-12

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257343, 257367, 257409, 257577, 257587, H01L 2976, H01L 2994

Patent

active

055743030

ABSTRACT:
The present invention provides a semiconductor device which is excellent in voltage sense characteristic and simple in manufacturing process. P diffusion regions 12 and 13 are selectively formed on a first major surface of an N.sup.- substrate 11, an electrode 31 is formed on the P diffusion region, a sense electrode 32 is formed on the P diffusion region 13, and an electrode 33 is formed on a second major surface of the N.sup.- substrate. Then, the electrode 31 is set at 0 V, constant current is led to the sense electrode 32, and the electrode 33 is positively biased. Thus, the voltage applied to the electrode 33 is sensed from a potential obtained at the sense electrode 32. A distance between the P diffusion regions 12 and 13 which determines a voltage sense characteristic can be accurately controlled, and a good voltage sense characteristic can be obtained. Moreover, a manufacturing process is relatively simple.

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