Semiconductor volatile/nonvolatile memory

Details Semiconductor volatile/nonvolatile memory Semiconductor volatile/nonvolatile memory

1993-03-03

1998-10-20

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257317, 257319, 257321, 257322, H01L 29788, H01L 2976

Patent

active

058250646

ABSTRACT:
The semiconductor nonvolatile memory has integrated memory cells, each being operative to carry out writing and reading of information in random-access basis and having an electric charge storage structure effective to memorize the information in nonvolatile state. The information is temporarily written into each memory cell in volatile state, and thereafter the temporarily written information is written at one into the respective electric charge storage structure of each memory cell, thereby effecting quick writing of nonvolatile information into the respective memory cells of multi-bits.

REFERENCES:
patent: 4288863 (1981-09-01), Adam
patent: 4686558 (1987-08-01), Adam
patent: 4729115 (1988-03-01), Kauffmann et al.
patent: 4752912 (1988-06-01), Guterman
patent: 4870615 (1989-09-01), Maruyama et al.
patent: 4924278 (1990-05-01), Logie
D.C. Guterman, "High Density 5 Volt-Only Compatible Non-volatile RAM Cell", nternational Electron Devices Meeting Technical Digest, 13-15 Dec. 1982, San Francisco, USA, pp. 728-732.

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