Semiconductor vertical MOSFET inverter circuit

Details Semiconductor vertical MOSFET inverter circuit Semiconductor vertical MOSFET inverter circuit

1991-11-22

1994-05-10

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257331, 257369, 257372, H01L 2978

Patent

active

053110501

ABSTRACT:
A semiconductor device including a semiconductor substrate 1 and at least one first column-shaped semiconductor layer 10 of a first channel type formed on semiconductor substrate 1 in order of first, second and third regions, and having a side surface. At least one second column-shaped semiconductor layer 11 of a second channel type is selectively laminated on first semiconductor layer 10 in order of first, second and third regions, and having a side surface. A gate insulation film 8 is formed on the side surfaces of first semiconductor layer 10 and second semiconductor layer 11. A gate electrode 9 is formed on the insulation film 8 extending to an external portion of first semiconductor layer 10. A first source layer 2 and first drain layer 4 are respectively formed in the first and third regions of first semiconductor layer 10. A second source layer 7 and second drain layer 5 are respectively formed in the first and third regions of semiconductor layer 11. An input terminal 14 is connected to gate electrode 9 to lead out to the exterior of first semiconductor layer 10. An output terminal 15 is connected to second drain layer 5 formed on and in low-resistance contact with first drain layer. A first power source terminal 16 is connected to first source layer 2 of first semiconductor layer 10, and a second power source terminal 17 is connected to second source layer 7.

REFERENCES:
patent: 3518509 (1970-06-01), Cullis
patent: 4740826 (1988-04-01), Chatterjee
patent: 4810906 (1989-03-01), Shah et al.
patent: 5140388 (1992-08-01), Bartelink

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