Semiconductor type physical quantity sensor

Details Semiconductor type physical quantity sensor Semiconductor type physical quantity sensor

1997-11-26

1999-11-16

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257420, 257627, 257730, 257794, 73727, H01L 2906, H01L 4100, G01L 906

Patent

active

059863161

ABSTRACT:
A diffusion gauge is formed in a surface of a silicon substrate which has a plane orientation of (110). The diffusion gauge is disposed so that a main current thereof flows along a <110> direction perpendicular to a direction in which large stress biased in one direction generates in the surface of the silicon substrate due to distortion of a base for fixing the silicon substrate. Therefore, even when the large biased stress generates in the surface of the silicon substrate, because the <110> direction in which the main current of the diffusion gauge flows is perpendicular to the direction in which the biased stress generates, there is a little change in a resistance value of the diffusion gauge. As a result, a detection error caused by the distortion of the base can be reduced.

REFERENCES:
patent: 5150616 (1992-09-01), Kondo et al.
patent: 5259248 (1993-11-01), Ugai
patent: 5583295 (1996-12-01), Nagase et al.
patent: 5587601 (1996-12-01), Kurtz
patent: 5604363 (1997-02-01), Ichihashi
patent: 5698785 (1997-12-01), Rich
IEEE Transactions on Electron Devices, vol.ED-29, No. 1 Jan. 1982, "A Graphical Re[Resentation of the Piezoresistance Coefficients in Silicon", Yozo Kanda.

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