Semiconductor trench structure having a sealing plug and method

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C257S301000

Reexamination Certificate

active

07902075

ABSTRACT:
In one embodiment, a semiconductor device is formed having a trench structure. The trench structure includes a single crystalline semiconductor plug formed along exposed upper surfaces of the trench. In one embodiment, the single crystalline semiconductor plug seals the trench to form a sealed core.

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