Semiconductor trench isolation structure

Details Semiconductor trench isolation structure Semiconductor trench isolation structure

2005-07-05

2005-07-05

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S510000, C257S513000, C257S524000, C431S246000

Reexamination Certificate

active

06914316

ABSTRACT:
A trench structure of a semiconductor device includes first and second regions of a substrate having first and second trenches, respectively, the first trench having an aspect ratio larger than that of the second trench, a first insulation material on a bottom and sidewalls of the first trench forming a first sub-trench in the first trench, a second insulation material completely filling the first sub-trench, a third insulation material formed on a bottom and sidewalls of the second trench forming a second sub-trench in the second trench, a fourth insulation material formed on a bottom and sidewalls of the second sub-trench, and a fifth insulation material completely filling a third sub-trench formed in the second sub-trench by the fourth insulation material.

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