Semiconductor trench capacitor cell having a buried strap

Details Semiconductor trench capacitor cell having a buried strap Semiconductor trench capacitor cell having a buried strap

1996-11-13

1998-06-23

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257304, 257305, H01L 27108

Patent

active

057708762

ABSTRACT:
A semiconductor trench capacitor structure having a first level aligned insulation structure and buried strap that extends from within the trench into the semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench extending into both the trench capacitor and the semiconductor substrate, depositing and densifying an insulating material within the shallow trench and using a resist layer to define and etch a strap trench aligned with the wall of the shallow trench, depositing a layer of conductive material within the strap trench and followed by depositing an insulating material therein.

REFERENCES:
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patent: 4801988 (1989-01-01), Kenney
patent: 4918502 (1990-04-01), Kaga
patent: 4927779 (1990-05-01), Dhong et al.
patent: 4988637 (1991-01-01), Dhong et al.
patent: 5198995 (1993-03-01), Dennard
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patent: 5360758 (1994-11-01), Bronner et al.
patent: 5363327 (1994-11-01), Henkles et al.
patent: 5389559 (1995-02-01), Hsieh et al.
patent: 5395786 (1995-03-01), Hsu et al.
patent: 5576566 (1996-11-01), Kenney

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