Semiconductor trench capacitor cell having a buried strap

Details Semiconductor trench capacitor cell having a buried strap Semiconductor trench capacitor cell having a buried strap

1995-04-13

1996-11-19

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257305, H01L 27108

Patent

active

055765661

ABSTRACT:
A semiconductor trench capacitor structure having a first level aligned isolation structure and buried strap that extends from within the trench into the doped semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench within the trench capacitor and semiconductor substrate, depositing a layer of conductive material within the shallow trench, using a mask to define and recess the strap and depositing insulating material within the shallow trench.

REFERENCES:
patent: 4801988 (1989-01-01), Kenney
patent: 4918502 (1990-04-01), Kaga
patent: 4939567 (1990-07-01), Kenney
patent: 4988637 (1991-01-01), Dhong
patent: 5034787 (1991-07-01), Dhong et al.
patent: 5198995 (1993-03-01), Dennard
patent: 5223447 (1993-06-01), Lee
patent: 5264716 (1993-11-01), Kenney
"Spacer-Defined Strap", IBM Technical Disclosure Bulletin, vol. 32 No. 4B, pp. 321-322 (Sep. 1989).

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