Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-09-02
2000-02-08
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257287, 257363, 257401, H01L 2976
Patent
active
06023086&
ABSTRACT:
A semiconductor device includes a transistor (30, 51) having a gate electrode (15, 52) wherein the gate electrode (15, 52) has a highly resistive portion (24, 25, 55). The highly resistive portion (24, 25, 55) is integrated into the gate electrode (15, 52) and is coupled to the gate electrode (15, 52) using a via-less contact method.
REFERENCES:
patent: 4194174 (1980-03-01), DeLise
patent: 4290185 (1981-09-01), McKenny et al.
patent: 4451328 (1984-05-01), Dubois
patent: 4586064 (1986-04-01), Esser et al.
patent: 4948747 (1990-08-01), Pfiester
patent: 5221639 (1993-06-01), White
patent: 5592006 (1997-01-01), Merrill
patent: 5610430 (1997-03-01), Yamashita et al.
Costa Julio C.
Martinez Marino J.
Reyes Adolfo C.
Schirmann Ernest
Crane Sara
Dover Rennie William
Motorola Inc.
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