Semiconductor transistor with stabilizing gate electrode

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257287, 257363, 257401, H01L 2976

Patent

active

06023086&

ABSTRACT:
A semiconductor device includes a transistor (30, 51) having a gate electrode (15, 52) wherein the gate electrode (15, 52) has a highly resistive portion (24, 25, 55). The highly resistive portion (24, 25, 55) is integrated into the gate electrode (15, 52) and is coupled to the gate electrode (15, 52) using a via-less contact method.

REFERENCES:
patent: 4194174 (1980-03-01), DeLise
patent: 4290185 (1981-09-01), McKenny et al.
patent: 4451328 (1984-05-01), Dubois
patent: 4586064 (1986-04-01), Esser et al.
patent: 4948747 (1990-08-01), Pfiester
patent: 5221639 (1993-06-01), White
patent: 5592006 (1997-01-01), Merrill
patent: 5610430 (1997-03-01), Yamashita et al.

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