Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Reexamination Certificate
2008-02-14
2011-11-15
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
C257S350000, C257S378000, C257S401000, C257S057000, C257S347000, C257S370000, C257SE29202
Reexamination Certificate
active
08058703
ABSTRACT:
A semiconductor transistor device includes a drift region, an insulating structure, a gate insulator, a gate electrode, a source, and a drain. The drift region includes a first lateral portion having a first dopant concentration and a second lateral portion having a second dopant concentration that is higher than the first lateral portion. The insulating structure is formed on the drift region and is disposed over a border between the first and second lateral portions such that hole generation is minimized in the drift region during operation.
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Choi Monica H.
Nguyen Cuong Q
Samsung Electronics Co,. Ltd.
Tran Tran
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